The present work will be helpful to deepen the understanding of laser boron doping as well as reduce the laser damage and relative high boron concentration induced by laser doping.Ī. Silicon nanowire (SiNW)-based solar cell fabrication was developed using a combination of diffused back surface field (BSF) formation and two-step H2 annealing for greater efficiency enhancement. The fabricated dopantfree radial junction cSi solar cells exhibit a power conversion efficiency of 20.1, which. The width of depletion region induced by the p + inversion layer is calculated from PC1D simulation as 900 nm. Besides, unique gettering degradation effect by taking iron concentration as standard is observed, which is attributed to the re-dissolution and re-segregation process during laser irradiation. Three-junction devices using III-V semiconductors have reached efficiencies of greater than 45 using concentrated sunlight. ALDAl 2 O 3 generates a p + inversion layer, which eventually forms the radial junction on the ncSi surface. Root mean square roughness is introduced to characterize the laser damage, whose variation trend with the laser frequency is opposite to that of effective minority carrier lifetime. Meanwhile, no amorphous silicon and rare holes are observed after laser irradiation, indicating a relative low laser damage. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the eciency ( abs 1.3), while, for n-type implanted solar cells, deep junction annealing increases the eciency and V oc, especially ( abs +0.4) for backside emitter solar cells.
PC1D simulation results based on the experimental boron doping profiles demonstrate that the doping modification realized by laser irradiation can achieving an efficiency improvement of 0.13% at most. In the present work, driving-in effect with a low surface doping concentration and a deep junction after laser irradiation is illustrated by using borosilicate glass formed in the boron spin-on dopant diffusion process as dopant source.